Samsung 990 EVO MZ-V9E2T0BW / SSD / encrypted / 2 TB / internal / M.2 2280 / PCI Express 5.0 x4 (NVMe) / 256-bit AES / TCG Opal Encryption 2.0 | MZ-V9E2T0BW

MZ-V9E2T0BW
148.12
164.58 (176.26 inc. VAT)
Availability: 105 item(s)
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Form Factor2.5", Internal Capacity2TB InterfaceM.2 Product Code03:231297 EAN Code8806095300269 ManufacturerSamsung

Product Features

  • Enhanced durability
    Equipped with Dynamic Thermal Guard protection, the Samsung 990 EVO ensures optimal performance by preventing overheating, making it a reliable choice for intensive tasks.
  • High-speed performance
    With an internal data rate of up to 5000 MBps for reading and 4200 MBps for writing, alongside PCI Express 5.0 x4 (NVMe) interface, this solid state drive offers swift data transfer speeds, enhancing your computing experience.
  • Robust security
    Featuring 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the Samsung 990 EVO provides advanced data security, protecting your sensitive information against unauthorized access.
  • Efficient operation
    The Auto Garbage Collection Algorithm and Device Sleep support contribute to efficient power management, reducing energy consumption while maintaining high performance.
  • Exceptional capacity
    With a 2 TB capacity and equipped with a 2GB LPDDR4 DRAM cache, this hard drive offers ample storage space and improved data retrieval speeds, making it ideal for heavy-duty applications.

Special Features

  • 2 TB capacity for extensive storage needs
  • PCI Express 5.0 x4 (NVMe) interface for swift data transfer
  • Dynamic Thermal Guard protection for durability
  • 256-bit AES hardware encryption for secure data protection
  • 5000 MBps read and 4200 MBps write speeds for efficient performance

Product Specification

Device Type Solid state drive - internal
Capacity 2 TB
Hardware Encryption Yes
Encryption Algorithm 256-bit AES
NAND Flash Memory Type Triple-level cell (TLC)
Form Factor M.2 2280
Interface PCI Express 5.0 x4 (NVMe)
Features TRIM support, Auto Garbage Collection Algorithm, Device Sleep support, Samsung V-NAND TLC Technology, 2GB LPDDR4 DRAM cache, Dynamic Thermal Guard protection, S.M.A.R.T.
Width 22 mm
Depth 80 mm
Height 2.38 mm
Weight 9 g
Performance Performance
Internal Data Rate 5000 MBps (read) / 4200 MBps (write)
4KB Random Read 22000 IOPS
4KB Random Write 90000 IOPS
Maximum 4KB Random Write 800000 IOPS
Maximum 4KB Random Read 700000 IOPS
Expansion & Connectivity Expansion & Connectivity
Compatible Bay M.2 2280
Power Power
Power Consumption 5.4 Watt (read) 4.7 Watt (write)
Software & System Requirements Software & System Requirements
Software Included Samsung Magician Software
Miscellaneous Miscellaneous
Compliant Standards IEEE 1667
Package Details Box
Manufacturer Warranty Manufacturer Warranty
Service & Support Limited warranty - 5 years
Environmental Parameters Environmental Parameters
Min Operating Temperature 0 °C
Max Operating Temperature 70 °C
Shock Tolerance (non-operating) 1500 g @ 0.5 ms

Features - Samsung - MZ-V9E2T0BW

Form Factor
  • 2.5"
  • Internal
Capacity
2TB
Interface
  • M.2
More Details
Product Code
03:231297
EAN Code
8806095300269
Manufacturer
Samsung
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