Samsung 990 PRO MZ-V9P4T0GW - SSD - encrypted - 4 TB - internal - M.2 2280 - PCIe 4.0 x4 (NVMe) - 256-bit AES - TCG Opal Encryption 2.0 - integrated heatsink | MZ-V9P4T0GW
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Product Features
- Enhanced durability
With an MTBF of 1,500,000 hours and a robust shock acceleration tolerance of 1500 g for non-operating conditions, this solid state drive offers exceptional durability and reliability for long-term use. - High-speed performance
Boasting an impressive internal data rate of up to 7450 MBps for reading and 6900 MBps for writing, alongside maximum 4KB random reads of 1600000 IOPS and writes of 1550000 IOPS, the Samsung 990 PRO ensures swift data access and transfer speeds. - Advanced security
Equipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, this drive provides advanced security features to protect your data from unauthorized access. - Efficient power management
Featuring a low average power consumption of 6.5 W and an idle mode requiring only 55 mW, the Samsung 990 PRO is designed for efficient energy use without sacrificing performance. - Innovative technology
Incorporating Samsung V-NAND TLC Technology, Garbage Collection technology, and Device Sleep support, this SSD offers enhanced efficiency, reliability, and a high-capacity 4 TB storage with a 4 GB Low Power DDR4 SDRAM Cache for optimal performance.
Special Fetures
- 4 TB capacity with 4 GB Low Power DDR4 SDRAM Cache for extensive storage and fast access
- PCI Express 4.0 x4 (NVMe) interface for high-speed data transfer
- Integrated heatsink to maintain optimal operating temperatures
- Supports S.M.A.R.T., TRIM, and Device Sleep for improved efficiency and durability
- 256-bit AES hardware encryption for secure data protection
Product Specification
| Device Type | Solid state drive - internal |
| Capacity | 4 TB |
| Hardware Encryption | Yes |
| Encryption Algorithm | 256-bit AES |
| Integrated Heatsink | Yes |
| Form Factor | M.2 2280 |
| Interface | PCIe 4.0 x4 (NVMe) |
| Features | TRIM support, Garbage Collection technology, Device Sleep support, Samsung V-NAND TLC Technology, 4 GB Low Power DDR4 SDRAM Cache, S.M.A.R.T. |
| Width | 25 mm |
| Depth | 80.15 mm |
| Height | 8.88 mm |
| Weight | 28 g |
| Performance | |
| Internal Data Rate | 7450 MBps (read) / 6900 MBps (write) |
| Maximum 4KB Random Write | 1550000 IOPS |
| Maximum 4KB Random Read | 1600000 IOPS |
| Reliability | |
| MTBF | 1,500,000 hours |
| Expansion & Connectivity | |
| Interfaces | PCI Express 4.0 x4 (NVMe) |
| Compatible Bay | M.2 2280 |
| Power | |
| Power Consumption | 6.5 Watt (average) ¦ 55 mW (idle) |
| Software & System Requirements | |
| Software Included | Samsung Magician Software |
| Miscellaneous | |
| Compliant Standards | IEEE 1667 |
| Manufacturer Warranty | |
| Service & Support | Limited warranty - 5 years / 2400 TBW |
| Environmental Parameters | |
| Min Operating Temperature | 0 °C |
| Max Operating Temperature | 70 °C |
| Shock Tolerance (non-operating) | 1500 g |
Features - Samsung - MZ-V9P4T0GW
Form Factor
- Internal
Interface
- M.2
More Details
Product Code
07:136800
EAN Code
8806095255811
Manufacturer
Samsung
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