Samsung PM981 MZVLB512HAJQ / Solid state drive / encrypted / 512 GB / internal / M.2 2280 / PCI Express 3.0 x4 (NVMe) / 256-bit AES-XTS / Self-Encrypting Drive (SED), TCG Opal Encryption 2.0 | MZVLB512HAJQ-00000
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Samsung PM981 MZVLB512HAJQ / Solid state drive / encrypted / 512 GB / internal / M.2 2280 / PCI Express 3.0 x4 (NVMe) / 256-bit AES-XTS / Self-Encrypting Drive (SED), TCG Opal Encryption 2.0 | MZVLB512HAJQ-00000
Product Specification
| Device Type | Solid state drive - internal |
| Capacity | 512 GB |
| Hardware Encryption | Yes |
| Encryption Algorithm | 256-bit AES-XTS |
| NAND Flash Memory Type | 3D multi-level cell (MLC) |
| Form Factor | M.2 2280 |
| Interface | PCI Express 3.0 x4 (NVMe) |
| Bytes per Sector | 512 |
| Features | 3D V-NAND Technology, NVM Express (NVMe) 1.2a |
| Width | 22 mm |
| Depth | 80 mm |
| Height | 2.38 mm |
| Weight | 9 g |
| Internal Data Rate | 3000 MBps (read) / 1800 MBps (write) |
| Maximum 4KB Random Write | 420000 IOPS |
| Maximum 4KB Random Read | 270000 IOPS |
| MTBF | 1,500,000 hours |
| Recoverable Errors | 1 per 10^15 |
| Interfaces | PCI Express 3.0 x8 (NVMe) - M.2 Card |
| Compatible Bay | M.2 2280 |
| Power Consumption | 5.9 Watt (read) ¦ 5.7 Watt (write) ¦ 30 mW (idle) |
| Compliant Standards | TUV, VCCI, BSMI, CB, IC, FCC, RoHS, KCC, cULus, RCM |
| Min Operating Temperature | 0 °C |
| Max Operating Temperature | 70 °C |
| Min Storage Temperature | -40 °C |
| Max Storage Temperature | 85 °C |
| Humidity Range Operating | 5 - 95% (non-condensing) |
| Shock Tolerance (non-operating) | 1500 g @ 0.5 ms half-sine wave |
| Vibration Tolerance (non-operating) | 20 g @ 20-2000 Hz |
Features - Samsung - MZVLB512HAJQ-00000
Form Factor
- 2.5"
- Internal
Capacity
512GB
Interface
- M.2
More Details
Product Code
07:110608
EAN Code
-
Manufacturer
Samsung
