Samsung PM9A3 MZQL215THBLA / SSD / encrypted / 15.36 TB / internal / 2.5" / U.2 PCIe 4.0 x4 (NVMe) / 256-bit AES-XTS / TCG Opal Encryption | MZQL215THBLA-00A07
Product Features
- Robust durability
Engineered to withstand tough conditions, the Samsung PM9A3 solid state drive boasts a shock acceleration operating at 1500 g and a vibration acceleration non-operating at 20 g, ensuring data integrity and drive longevity even in challenging environments. - Exceptional performance
With an internal data rate of up to 5200 MBps for reading and 4000 MBps for writing, coupled with a 4KB random read of 850000 IOPS and a 4KB random write of 160000 IOPS, this drive delivers speed and reliability for high-intensity workloads. - Advanced security
The Samsung PM9A3 is equipped with 256-bit AES-XTS encryption, providing high-level data protection. TCG Opal Encryption and hardware encryption ensure that your data remains secure against unauthorized access. - Efficient power management
Featuring dynamic power consumption with 11 watts in read mode, 13.5 watts in write mode, and a mere 4 watts during idle, this SSD balances performance with efficiency, making it an ideal choice for energy-conscious setups. - High capacity storage
Offering a substantial 15.36 TB capacity, this SSD meets the needs of demanding storage requirements, making it perfect for extensive data archives, high-resolution media libraries, and large-scale applications.
Special Features
- 15.36 TB capacity meets extensive storage requirements
- Up to 5200 MBps internal data rate for rapid file access and transfer
- 850000 IOPS for 4KB random read enhances multitasking capabilities
- 256-bit AES-XTS encryption for advanced data security
- Energy-efficient design with low power consumption in idle mode
Product Specification
Device Type | Solid state drive - internal |
Capacity | 15.36 TB |
Hardware Encryption | Yes |
Encryption Algorithm | 256-bit AES-XTS |
NAND Flash Memory Type | Multi-level cell (MLC) |
Form Factor | 2.5" |
Interface | U.2 PCIe 4.0 x4 (NVMe) |
Bytes per Sector | 512 |
Features | Halogen Free, TRIM support, Dynamic and Static Wear Leveling, Enhanced Power Loss Data Protection, End-to-end data protection, V-NAND Technology, Samsung Elpis Controller, NGUID supported, S.M.A.R.T. |
Width | 69.85 mm |
Depth | 100.2 mm |
Height | 7 mm |
Weight | 90 g |
Performance | Performance |
Drive Writes Per Day (DWPD) | 1 |
Internal Data Rate | 5200 MBps (read) / 4000 MBps (write) |
4KB Random Read | 850000 IOPS |
4KB Random Write | 160000 IOPS |
Average Latency | 0.02 ms |
Reliability | Reliability |
MTBF | 2,000,000 hours |
Non-Recoverable Errors | 1 per 10^17 |
Expansion & Connectivity | Expansion & Connectivity |
Interfaces | PCI Express 4.0 x4 U.2 (NVMe) |
Compatible Bay | 2.5" |
Power | Power |
Power Consumption | 11 Watt (read) 13.5 Watt (write) 4 Watt (idle) |
Miscellaneous | Miscellaneous |
Compliant Standards | TUV, VCCI, BSMI, cUL, CB, IC, FCC, RoHS, KCC, RCM |
Environmental Parameters | Environmental Parameters |
Min Operating Temperature | 0 ðC |
Max Operating Temperature | 70 ðC |
Min Storage Temperature | -40 ðC |
Max Storage Temperature | 85 ðC |
Humidity Range Operating | 5 - 95% (non-condensing) |
Shock Tolerance (operating) | 1500 g @ 0.5 ms half-sine |
Vibration Tolerance (non-operating) | 20 g @ 10-2000 Hz |
- 2.5"
- Internal
- U.2
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